Abstract
AbstractThe individual effects of an atmospheric‐pressure dielectric barrier discharge (DBD) treatment in oxygen on the low temperature bonding behavior of native oxide covered silicon wafers are evaluated. The role of oxide porosity as well as the hindering influence of embedded water molecules are particularly emphasized. The need for maximization of surface silanol density is relativized. Reasons are given, why highly reactive groups and catalytic agents are not expected to have severe influence on the improvement of bond strengthening.
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