Abstract
The influence of substrate temperature on ZrxHf1−xO2/Al/ZrxHf1−xO2 trilayer thin-films deposited on n-type Si(100) and commercial glass substrates using magnetron sputtering technique is systematically investigated with the substrate temperature ranging from 25 to 300°C. The deposited films are characterized by x-ray reflectivity (XRR), grazing incidence x-ray diffraction (GI-XRD), x-ray photoelectron spectroscopy (XPS), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM), cross-sectional transmission electron microscope (TEM), energy-dispersive x-ray spectroscopy (EDX) and UV–VIS spectroscopy to study the microstructural, morphological and optical properties. Capacitance–voltage (C–V) and current–voltage (I–V) measurements are performed to investigate the electrical properties of the trilayer thin-films. Physical characterization reveals that as the substrate temperature rises, the crystalline quality of the trilayer thin-films improves. Further, a rise in substrate temperature causes an increase in surface roughness and grain size. The trilayer thin-film deposited at 300°C shows improved optical transmittance over wavelengths 400–1100 nm. In addition this trilayer thin-film demonstrates highest figure of merit, lower leakage current as well as improved breakdown performance. Hence, ZrxHf1−xO2/Al/ZrxHf1−xO2 thin-film prepared at 300°C could be used in opto-electronic devices.
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