Abstract
CdO/Si heterojunctions were fabricated by depositing CdO polycrystalline thin films on p-type single crystalline silicon wafers by CBD. The current–voltage characteristics under dark and illumination of CdO/Si devices resemble those of a light sensitive diode. From the CdO/Si diode spectral sensitivity curves (A/W), it has been implied that CdO films allow a high sensitivity response in the visible and the near infrared regions.
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