Abstract
AbstractOne effective way to extend the functional degree of freedom for semiconductors is to introduce structural defects (e.g., surface or interface) and chemical defects as they commonly exist and modify the properties of the entity. Here, the optoelectronic properties of bismuth ferrite thin films and their tuning by the interface between the film and the strontium titanate substrate are reported. The defects that have been demonstrated, especially oxygen vacancies, are of paramount importance in the photoelectric properties of a film‐substrate system. A detailed analysis of the oxygen vacancy levels supports the role of the interface in carrier transport. These results provide a new strategy to design the optoelectronic device via usual defect doping and interface coupling.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
