Optoelectronic and structural properties of ITO/Ag/ITO transparent electrodes using ultraviolet laser annealing

Abstract

Indium tin oxide (ITO) is widely used in the optoelectronic industry as a transparent conductive oxide owing to its excellent optical and electrical properties. To improve the physical properties of ITO, highly conductive ITO/Ag/ITO multilayer electrodes were prepared using radio frequency (RF) magnetron sputtering at room temperature. Then, laser annealing was performed on the multilayer electrodes with scanning intervals of 0.01, 0.02, 0.05 and 0.1 mm. The structural properties of the multilayer electrodes were characterized by X-ray diffraction, and their optical and electrical properties were characterized by ultraviolet (UV) visible spectrophotometry and a four-point probe station, respectively. The results demonstrated that the multilayer films had a polycrystalline structure, and ITO (222) and Ag (111) preferred orientations were identified after laser annealing. In addition, the crystalline size of the Ag layers increased slightly, implying that the defect density within the Ag layers was reduced, resulting in a significant increase in its conductivity. A significantly low electrical resistivity of 5.35 [Formula: see text]/sq and high optical transmittance of 85% were achieved. The Haacke index value was [Formula: see text], which was much better than the value of [Formula: see text] before laser annealing.