Optoelectronic and DFT investigation of thienylenevinylene based materials for thin film transistors

Abstract

• Tuning the monomeric constituents of a polymeric semiconductor. • Tailoring the structural and performance for OFETs application. • Material’s properties and OFETs device performance is determined. • Top Gate/Bottom Contact OFET device is fabricated. • P-type characteristics were observed with P3 maximum mobility of 0.0136 cm 2 V −1 s −1 . Tuning the monomeric constituents along the backbone of a polymeric semiconductor has been quite exploited in altering the photophysical properties of functional materials. Despite this, electron accepting unit alteration schemes have seldomely been utilized in tailoring the structural and performance feature of these moieties especially for OFETs application. Herein, we modulate the acceptor composition within a π-conjugated semiconductor through simple random co-polymerization reaction to obtain resulting terpolymers and assess their structural modification on the material’s properties and OFETs device performance. Synthesized polymers P1-P3, demonstrated tenuous changes in their optoelectronic properties. In an encapsulated Top Gate/Bottom Contact OFET device, a P-type characteristics were observed with P3 terpolymer demonstrating a comparatively better maximum mobility of 0.0136 cm 2 V −1 s −1 .