Optimum silicon ion dose for 1540 nm photoluminescence from erbium-doped silica thin films formed by MEVVA implantation

Abstract

In this work, SiO 2 thin films containing Er and Si nanocrystals were prepared by implantation with a metal vapor vacuum arc (MEVVA) ion source. Photoluminescence (PL) properties of the films at 77 K and at room temperature (RT) were studied as functions of the Si ion dose. The PL intensities were strongly enhanced by the incorporation of nanocrystalline Si (nc-Si) in the SiO 2 films. The intensity of the 1.54 μm luminescence peak first increased with increasing Si dose, arriving at a maximum at a Si dose of 5×10 17 cm −2, then decreased with further increase in Si dose. These results are discussed and understood in terms of the role of nc-Si in Er luminescence mechanisms in silica containing nc-Si.