Abstract
Optimization of the trapezoidal Ge profile to minimize base transit time of the SiGe bipolar transistor was examined. A closed-form equation to find the optimum point of the trapezoidal Ge profile for base transit time minimization as a function of temperature is derived. Experimental data published in the literature are used to compare the model predictions with measurement.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.