Abstract
Practical secondary ion mass spectrometry depth resolution data show that decreasing beam energies lead to an enhanced resolution down to the lowest practical energy of 1 keV O+2 at near normal incidence. For B and C in Si, the resolution full width at half-maximum amounts to 3.1 and ∼1.4 nm, respectively. Using a retarded probing beam, we have shown that a useful flux of Si atoms can be sputtered with primary energies as low as 260 eV O+2 or 130 eV O+; the Si sputter yield is also shown to be weakly dependent on the probe energy. Therefore it is predicted that this low energy is the optimum to use in a depth profiling experiment using oxygen. The predicted resolution for B and C amounts to 1.8 and 0.8 nm. Such an analytical performance would easily justify the resources required to produce ultralow energy beams on a routine basis.
Published Version
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