Optimizing the growth of CoSi 2 film with oxide-mediated CoSi 2 template by silicon cap layer

Abstract

Applying both template and Si cap technology, we achieved the epitaxial growth of CoSi 2 directly on Si(1 0 0) substrate by rapid thermal annealing (RTA). The crystal quality of CoSi 2 film is found to be significantly dependent on the Si cap thickness. In our work, a good-quality CoSi 2 film with a minimum of χ min~11.6% and 3.3 Ω/square was obtained as a 15 nm Co with a subsequent 15 nm Si cap layer is deposited on an oxide-mediated CoSi 2 template and followed by an anneal at 1050 °C under N 2 protection; whereas too thin or thick Si cap layer will deteriorate the crystalline quality of CoSi 2. These experimental results are discussed in combination with the simulation of Rutherford backscattering spectroscopy and X-ray reflectivity.