Abstract
Gated ZnO nanowire field emitter arrays (FEAs) have important applications in large-area vacuum microelectronic devices such as flat panel X-ray sources and photodetectors. As the application requires high-pixel-density FEAs, how the pixel density affects the emission performance of the gated ZnO nanowire FEAs needs investigating. In this paper, the performance of coaxis planar -gated ZnO nanowire FEAs was simulated under different pixel sizes while keeping the lateral geometric parameter in proportion. The variations in emission current and gate modulation with pixel size were obtained. Using the obtained device parameters, the coaxis planar-gated ZnO nanowire FEAs were prepared. Field emission measurement results showed that a current density of 3.2 mA/cm2 was achieved from the fabricated ZnO nanowire FEAs when the gate voltage was 140 V. A transconductance of 253 nS was obtained, indicating effective gate control. The improved performance is attributed to optimized gate modulation.
Highlights
ZnO Nanowire Field-Emitter ArraysVacuum microelectronic devices, such as X-ray sources [1–3], photodetectors [4,5]and parallel electron beam lithography [6], impose high requirements on large-area field emitter arrays (FEAs)
Li et al reported fork-fingershaped planar-gated ZnO nanowire FEAs, and a field emission display using the FEAs displayed a cartoon of a running dog and Chinese characters in full screen [27]
The available experimental results show that the coaxis planar-gated FEAs have the advantages of simple structure and easy integration with ZnO nanowires, which are promising for large-area vacuum microelectronic device applications
Summary
Vacuum microelectronic devices, such as X-ray sources [1–3], photodetectors [4,5]. and parallel electron beam lithography [6], impose high requirements on large-area field emitter arrays (FEAs). Planar-gate ZnO nanowire FEAs using a ring-shaped cathode were proposed in the work of Zhao et al [19]. Cao et al further proposed coaxis planar-gated ZnO nanowire FEAs with an in-plane focusing gate electrode and by Tuning Pixel Density. The available experimental results show that the coaxis planar-gated FEAs have the advantages of simple structure and easy integration with ZnO nanowires, which are promising for large-area vacuum microelectronic device applications. It is interesting to investigate how the performance of gated nanowire FEAs varies with the pixel density This issue has not been addressed yet. The gate modulation of the electrical field and emission current of coaxis planar-gated ZnO nanowire FEAs with different pixel sizes is simulated using a two-dimensional (2D) model. This work has significance for improving the resolution and performance of large-area ZnO nanowire FEAs and realizing their applications
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