Abstract
In this study, a gated ZnO nanowire field emitter arrays (FEAs) was fabricated for the application of pulsed flat panel X-ray source. The ZnO nanowires were grown using thermal oxidation method and the growth ZnO nanowires in the device structure was optimized by adjusting the oxidation atmosphere. The pulsed response of the FEAs was studied and corresponding X-ray emission was detected.
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