Abstract
(110)-oriented diamond films were grown by hot-filament chemical vapor deposition method. Microwave assisted hydrogen plasma etching process was used to obtain hydrogen-terminated diamond films. The influence of gas pressure and substrate temperature during hydrogen plasma etching on structural and electrical properties of diamond film was investigated. The ultra-violet Raman spectra showed CHX bond increased with the gas pressure and the substrate temperature. The Hall Effect measurement results showed that the higher CHX bond density led to a higher sheet carrier density and lower sheet resistance, which was helpful for the fabrication of high-frequency and high-power field-effect transistors.
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