Abstract
Dual-junction solar cells have permitted to augment markedly efficiency of solar energy harvesting. This is because they involve a combination of III-V semiconductor materials with different band gaps which enables for better absorbance of the solar spectrum and consequently higher efficiency. In these last years, intensive research has been dedicated to develop reliable methods for performing structural optimization of these devices. This work proposes a new numerical procedure in order to achieve optimal design of a dual junction solar cell made of InGaP/GaAs tandem combination. This particular structure relies on the InGaP single junction solar cell, which is used as a front stack, and a back surface field. Optimization was conducted sequentially through post processing data results generated from large parametric simulations performed by using the 2D SILVACO-ATLAS software. The procedure encompasses using either a quadratic response surface model or an artificial neural network model at each stage of the optimization process to determine the actual optimal design of the solar cell. The obtained final optimal design has been shown to yield, under the AM1.5 spectrum, an efficiency of 35.15% at temperature 20°C which is higher than that of previous known results from literature.
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