Abstract
An layer grows on the showerhead in our plasma-enhanced chemical vapor deposition chamber during fluorinated between-wafer cleans. The additional impedance caused by the layer reduces the power transferred to the plasma, changing film characteristics during subsequent depositions. Moreover, nonuniform growth on the showerhead causes nonuniform plasma densities that result in across-wafer variation in film properties. Proper selection of pressure during the clean affords greater control over the growth and uniformity of Better management of growth yields better control of film characteristics and renders increased tool availability. © 2001 The Electrochemical Society. All rights reserved.
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