Abstract

Mg2Si1–xSnx compounds are low-cost and environmentally friendly thermoelectric materials expected to be applied as power generators in the intermediate temperature range. Optimization of the thermoelectric properties of Mg2Si1–xSnx compounds can be accomplished by the precise control and adjustment of the Mg content. A series of Mg2(1+z)Si0.5–ySn0.5Sby (0 ≤ y ≤ 0.015 and 0 ≤ z ≤ 0.15) compounds with controlled Mg content were synthesized by a two-step solid-state reaction method, followed by a spark plasma sintering technique. On the basis of optimized thermoelectric properties via doping with Sb, the effect of a variable content of Mg spanning from understoichiometry to overstoichiometry has been systematically explored. The results indicate that when the actual Mg content exceeds the stoichiometric amount, the dominant point defects in Mg2(1+z)Si0.49Sn0.5Sb0.01 compounds are interstitial Mg and Si/Sn vacancies. At the same time, the electron concentration is enhanced with increasing content of Mg. Howev...

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call