Optimized strained In xGa 1−xAs structures for device application

Abstract

Strained InGaAs/(AlGa)As quantum wells were grown on GaAs by molecular beam epitaxy for optimized device performance. Pseudomorphic growth, i.e., absence of relaxation and misfit dislocations, is conclusively verified by X-ray diffraction with asymmetric reflexes. Narrow photoluminescence linewidths and pronounced satellite peaks in symmetric diffraction geometry, usually taken as evidence for lateral lattice matching, do not suffice. Growth and structure parameters for pseudomorphic devices will be given.