Abstract
We theoretically investigate the spin injection in different ferromagnet/insulator/n-Si tunnel contacts by using the lattice non-equilibrium Green’s function method. We find that the tunnel contacts with low-barrier materials such as TiO2 and Ta2O5 have far lower resistances than the conventional-barrier materials, resulting in a wider and attainable optimum parameters window for improving the spin-injection efficiency and magnetoresistance ratio of a vertical-spin metal–oxide–semiconductor field-effect transistor. Additionally, we find that the spin-asymmetry coefficient of the TiO2 tunnel contact has a negative value, while that of the Ta2O5 contact can be tuned between positive and negative values by changing the parameters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
