Abstract
The optoelectronic characteristics of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with AlInGaN/AlInN superlattices electron blocking layer (EBL) are numerically investigated. The results show that DUV LED with AlInGaN/AlInN EBL has superior carrier confinement capability over the DUV LED with conventional AlGaN EBL. Hence, the internal quantum efficiency (IQE) and radiative recombination rate of the proposed LED is increased by 49% and 219%, respectively as compared to conventional LED. This is assigned to the optimal recombination of electron-hole pairs in the active zone of the proposed LED. Interestingly, the proposed LED also exhibits near-droop-free efficiency.
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