Abstract
The VGF growth of Si-doped GaAs crystals is improved considerably by optimizing the design of the crucible support and the temperature profile during the growth run. Inverse simulation with the software program CrysVUN++ was used for this procedure. The criteria for the optimized conditions are flat phase boundaries and low thermal stress during the whole growth run. The crystals which were grown according to the simulated conditions indeed showed flat phase boundaries and a very low EPD (<100 cm −2) within the whole crystal. It is shown that the growth conditions in the seed well and conical part of the crystal have a major influence on the dislocation density in the whole crystal.
Published Version
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