Abstract
AbstractIn this paper, tape casting of Si3N4 substrate were investigated and optimized. The effects of dispersant content, binder, plasticizer/binder ratio, and solid loading on the green sheet properties were studied. An optimal formulation for the tape casting slurries was proposed, green tape with homogeneous microstructure and higher relative density of 56.08% was developed. After gas‐pressure sintering and annealing, Si3N4 substrate with a relative density of above 99% and thermal conductivity as 58 W/m/K was obtained. Results showed that the combination of tape casting and gas‐pressure sintering is feasible for the development of Si3N4 circuit substrates for power electronic devices.
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