Optimization of the structural and optical quality of InN nanowires on Si(111) by molecular beam epitaxy

Abstract

The authors report on the growth and characterization of high quality InN nanowires on Si(111) by radio frequency plasma-assisted molecular beam epitaxy. InN nanowires with nontapered morphology were achieved with the use of an in situ deposited In seeding layer. They further examined the effects of the growth temperature, In/N flux ratio, as well as the thickness of the In seeding layer on the morphological, structural, and optical properties of InN nanowires grown directly on Si(111). It was observed that nontapered InN nanowires exhibit significantly improved optical quality compared to the conventionally grown InN nanowires.