Abstract
Shallow p/sup +/-n and n/sup +/-p junctions were formed in germanium preamorphized Si substrates. Germanium implantation was carried out over the energy range of 50-125 keV and at doses from 3*10/sup 14/ to 1*10/sup 15/ cm/sup -2/. p/sup +/-n junctions were formed by 10-keV boron implantation at a dose of 1*10/sup 15/ cm/sup -2/. Arsenic was implanted at 50 keV at a dose of 5*10/sup 15/ cm/sup -2/ to form the n/sup +/-p junctions. Rapid thermal annealing was used for dopant activation and damage removal. Ge, B, and As distribution profiles were measured by secondary ion mass spectroscopy. Rutherford backscattering spectrometry was used to study the dependence of the amorphous layer formation on the energy and dose of germanium ion implantation. Cross-sectional transmission electron microscopy was used to study the residual defects formed due to preamorphization. Complete elimination of the residual end-of-range damage was achieved in samples preamorphized by 50-keV/1*10/sup 15/ cm/sup -2/ germanium implantation. Areal and peripheral leakage current densities of the junctions were studied as a function of germanium implantation parameters. The results show that high-quality p/sup +/-n and n/sup +/-p junctions can be formed in germanium preamorphized substrates if the preamorphization conditions are optimized. >
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