Abstract
The diffusion of boron, implanted into crystal and preamorphized silicon in the form of boron difluoride, has been studied using secondary-ion mass spectroscopy and cross-sectional transmission electron microscopy. A 90-keV silicon implant creates an amorphous layer extending from the silicon surface to a depth of 186 nm as measured by Rutherford backscattering spectroscopy. The as-implanted boron profiles are contained completely within the amorphous layer. Results indicate that boron diffusion in the amorphous layer is suppressed during rapid thermal annealing between 1000 and 1150 °C. Discussion of this is based on the effect of fluorine on the boron diffusion.
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