Abstract
The radiofrequency (RF) stability of a charge plasma double-gate junctionless transistor (DG-CPJLT) is reported based on the stability factor (K) obtained from the Y-parameters of the device. The impact of variation of geometrical parameters, voltage biases, temperature, and interface traps on the stability of the DG-CPJLT is studied. Based on the results, an optimized DG-CPJLT device is designed and its RF figures of merit obtained. S-parameter values are also computed to study the high-frequency behavior of the device. Moreover, parameters for evaluation of the linearity, such as the third-order transconductance coefficient (gm3) and third-order voltage intercept point (VIP3), are also obtained for the optimized device. It is found that the DG-CPJLT shows significantly improved stability without affecting the RF figures of merit.
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