Optimization of the Fabrication Process for ZnO Thin-Film Transistors with HfO2 Gate Dielectrics

Abstract

Listen

Translate article

In this work, we address the analysis of ZnO thin films and electrical characteristics of ZnO thin film transistors (TFTs) with HfO2 high-k gate dielectrics after low-temperature postannealing. The SIMS analysis shows that the diffusion of Zn atoms into the HfO2 gate dielectrics will occur after 300 °C annealing and the related electrical characteristics indicate that 200 °C annealing will be the suitable annealing condition for ZnO/HfO2/ITO-based TFTs. The ZnO TFTs after 200 °C annealing exhibited transistor behavior over the range of 0–7 V; the field effect mobility, subthreshold slope, and on/off ratio were measured to be 1.3 cm2 V-1 s-1, 0.5 V/decade, and ∼106, respectively.