Abstract
Tin monosulfide (SnS) films with varying distance between the source and substrate(DSS) were prepared by the thermal evaporation technique at a temperature of300 °C to investigate the effect of the DSS on the physical properties. The physicalproperties of the as-deposited films are strongly influenced by the variation ofDSS. The thickness, Sn to S at.% ratio, grain size, and root mean square (rms)roughness of the films decreased with the increase of DSS. The films grown atDSS = 10 and 15 cm exhibited nearly single-crystalline nature with low electrical resistivity.From Hall-effect measurements, it is observed that the films grown atDSS≤15 cm havep-type conduction and the films grown at higher distances have n-type conduction due to the variation of theSn/S ratio. Thefilms grown at DSS = 15 cm showed higher optical band gap of 1.36 eV as compared with the films grown at otherdistances. The effect of the DSS on the physical properties of SnS films is discussed andreported.
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