Optimization of surface passivation parameters in [147Pm]-Si planar p-n junction betavoltaic based on analytical 1-D minority carrier diffusion equation approaches

Abstract

Recombination of the carrier due to the surface state level traps could affect betavoltaic performance. Herein, we employed a theoretical 1-D carrier transport calculation to investigate the surface passivation effect in a planar [147Pm]-Si p-n junction betavoltaic cell and the results were verified using previous studies. In comparison to the ideal condition of the passivated surface, we predict a 10.74% power loss at the device, thus further research concerning the surface passivation layer for betavoltaic batteries might be necessary.