Abstract
Water assisted chemical vapor deposition (CVD) is used widely to synthesize super long, vertically aligned, densely packed carbon nanotube (CNT) forests. Various water assisted CVD parameters give the important influence on the quality of CNT forests. In this paper, several main parameters in water assisted CVD are optimized, such as the flow rate of H2, the content of water and growth temperature. Furthermore, growth on the conductive substrate is also studied by water assisted CVD. Under optimum condition with 10 minutes growth, the length of CNT forests could be 815 μm on silicon substrate and 369 μm on conductive substrate.
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