Abstract
AbstractEffect of substrate treatment conditions, deposition temperature and deposition rate on the crystallinity of β‐FeSi2 films formed on Si substrate was investigated. The substrates were treated with Ne+ ion beams at room temperature and then annealed at 1073 K prior to film fabrication by means of ion beam sputter deposition (IBSD) method. Combinations of experimental parameters which promote the film growth with an epitaxial relationship of β‐FeSi2 (100) // Si (100) were identified. These results were explained qualitatively in terms of the substrate treatment conditions, deposition temperature, as well as on the local Fe/Si ratio. The observed dependence of the film structure on these experimental parameters indicated that careful optimization of substrate treatment conditions and deposition parameters would further stimulate effort to fabricate β‐FeSi2 films with excellent crystalline properties. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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