Abstract
Co films in the thickness range of 120–230 nm have been sputtered on quartz glass and monocrystalline sapphire (11 2 0) substrates. A preferential orientation of the hcp [0001]- and the fcc [111]-axis, respectively, has been observed at low sputtering rates (0.05 nm/s) and after optimization of the substrate temperature T s. For 200°C ≤ T s ≤ 300°C the structural coherence length normal to the film-plane reaches its maximum. The measured lattice spacings d are between the bulk values d (0002) and d (111) of the hcp- and the fcc-phase, respectively, and reach a minimum in the same range of temperatures. REM investigations supplement the X-ray measurements. Furthermore, thinner Co films (10–25 nm) were sputtered at 250 and 300°C. X-ray patterns show superior film quality at 300°C, slightly dependent on Ar pressure.
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