Abstract
Research has shown that SAW (surface acoustic wave) devices with an LGS/Pt (langasite La3Ga5SiO14/platinum) structure are useful in high-temperature sensor applications. Extreme high temperature brings great acoustic attenuation because of the thermal radiation loss, which requires that the sensing device offer a sufficiently high quality factor (Q) and a low loss. Therefore, it is necessary to improve the performance of the quality factor as much as possible so as to better meet the application of high-temperature sensors. Based on these reasons, the main work of this paper was to extract accurate simulation parameters to optimize the Pt/LGS device and obtain Q-value device parameters. Optimization of SAW devices with LGS/Pt structure for sensing extreme high temperature was addressed by employing a typical coupling of modes (COM) model in this work. Using the short pulse method, the reflection coefficient of Pt electrodes on LGS substrate was extracted accurately by characterizing the prepared SAW device with strategic design. Other relevant parameters for COM simulation were determined by finite element analysis. To determine the optimal design parameters, the COM simulation was conducted on the SAW sensing device with a one-port resonator pattern for sensing extreme temperature, which allows for a larger Q-value and low insertion loss. Experimental results validate the theoretical simulation. In addition, the corresponding high-temperature characteristics of the prepared sensing device were investigated.
Highlights
Traditional sensing technology is not an adequate candidate for sensing extreme high temperature because of its wired installation and power supply requirement
The short pulse method was established to accurately determine the reflection coefficient (RC) of Pt/Ti electrodes on LGS substrate
Based on the coupling of modes (COM) simulation, the sensing chip for the high-temperature sensing device was reproducibly prepared on a LGS (0°, 138.5°, 26.7°) substrate by the standard photolithographic λ
Summary
Traditional sensing technology is not an adequate candidate for sensing extreme high temperature because of its wired installation and power supply requirement. The premise of realizing high-performance sensing approach device is to an accurate optimization simulation method. The optimization of a device with Pt/LGS structure for sensing extreme high among them was temperature was ignored. The short pulse method was established to accurately determine the RC of Pt/Ti electrodes on LGS substrate On this basis, COM simulation of the high-temperature sensing device with Pt/LGS structure was performed to determine temperature was conducted by employing the typical COM model. On this basis, COM simulation of the high-temperature sensing device with Pt/LGS structure was performed to determine the optimal design parameters, allowing for a high Q-value and low insertion loss. Experimental results from the prepared device with a one-port resonator pattern confirmed the theoretical analysis
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