Abstract
The optimization of diffraction gratings for pixelless thermal imagers based on the epitaxial integration of a 9-μm quantum-well infrared photodetector (QWIP) and a near-infrared light-emitting diode (LED) is reported. It is found that the thickness of the reflecting layer deposited onto the grating should be carefully controlled to reach a good tradeoff between high infrared responsivity of the QWIP and reasonable external efficiency of the LED. In addition, on a non-optimized device we demonstrated thermal images with a temperature sensitivity below 100 mK and a noise equivalent temperature difference of 57 mK.
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