Abstract
A bottom antireflective coating (BARC) is essential for deep ultraviolet lithography. We have already reported the BARC composed of polysilanes which can be spin coated and etched faster than resists. In this study, polysilane structures are optimized in order to set the etch selectivity against resists to a higher level than that previously reported without losing the antireflection performance. The results indicate that the networked polysilanes structure is the most suitable. Poly(methylhydrosilane) whose Si–H is partially cross-linked and has the highest silicon content of 64.8 wt% yields the optimal results. The resist profile is achieved on it without footing and residue. The refractive index at the wavelength of KrF excimer (248 nm) is n=1.93, k=0.32, and the polymer reduces multi-reflection in both resists and in transparent substrates. The etch selectivities are 4.8 under Cl2 plasma and 6.6 under HBr plasma, which are much higher than that of an organic BARC, namely, about 1.
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