Abstract
The Ni(Pt)/Si-cap/SiGe silicidation process has been optimized by modulating the Si-cap layer thickness and a cold Si preamorphization implantation (PAI), which effectively reduces the sheet resistance (Rs). In addition, it is revealed that PAI can obviously increase the Ni(Pt)Si grain size for a lower Rs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have