Effects of Pre-amorphization Thickness and Carbon Implantation on NiPt/Si Silicidation Process

Abstract

The impact of the amorphous silicon (a-Si) thickness generated by the Pre-Amorphization Implantation (PAI) process and the potential benefits of adding a carbon implantation step on the Ni-silicidation process was evaluated. The silicide resistivity is improved in the same way when Si or Ge PAI process is performed compared to the reference sample. However, the specie used for PAI has an impact on the silicide roughness. Adding carbon after Ge or Si implantation reduces the silicide roughness at the expense of an increased resistivity. It has also a positive impact on the Pt distribution in the silicide and its thermal stability.