Abstract
Uncooled antenna-coupled terahertz microbolometer arrays are fabricated with a meander-type Ti thermistor, and design widths (DW) = 0.1 and 0.2 µm, considering the design requirement to miniaturize detectors. Each unit device with DW = 0.1 µm of the thermistor has about 4.7 time higher electrical responsivity (132 V/W) than that with DW = 0.2 µm (28.2 V/W) at 10 µA bias current. For DW = 0.2 µm, the calculated noise equivalent power (NEP) was 2.29 × 10−9 W/, whereas the minimum NEP of 4.43 × 10−10 W/ was obtained for DW = 0.1 µm devices, both at 10 µA bias current. The bulk value of temperature coefficient of resistance (TCR) of the Ti thermistor is markedly compromised in low dimensional devices, still in terms of responsivity and NEP, unit devices with Ti thermistor with the lower DW shows better performance. This is because the narrow width effect is minimized owing to higher resistivity for DW = 0.1 than that for DW = 0.2 µm. In this current report, we highlights the optimization of the narrow width effect on TCR of metal interconnects in nanometer dimensions, which to the best of our knowledge is not available at present.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.