Abstract
The effect of the MoSe2 layer has been numerically investigated using SCAPS-1D solar cell modeling software. Using a combination of energy bandgap from 1 to 1.5 eV and thickness from 10 to 130 nm for MoSe2 best configuration was determined for high-efficiency CIGS solar cell. Optimized MoSe2 layer improved the efficiency to 20.4 % with Voc of 0.74 V, Jsc of 3.6 mA/cm2, and fill factor of 0.89 relative to 14.55 % for cell without MoSe2 layer. With the increase in bandgap of MoSe2, the efficiency of the cell increased gradually up to 1.35 eV and then suddenly decreased for the bandgap above 1.35 eV. The decrease in efficiency is observed mainly because of the reduction in Jsc and reduction in FF due to lower maximum voltage output. As the thickness was increased from 10 nm up to 50 nm, Jsc increased due to a reduction in recombination back contact and remains almost constant for thickness above 60 nm. Efficiency was observed to be improved with the thickness of the MoSe2 layer above 60 nm. With the increase of 8 % efficiency, the findings could be used to develop high-efficiency, cost-effective CIGS solar cells.
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