Abstract
Thin-film solar cells (TFSCs) have the potential to reach cost effective photovoltaic generated electricity. Cadmium Sulfide (CdS) and Indium Sulfide (In 2 S 3 ) buffer layer based Copper Indium Gallium Selenide (CIGS) solar cell offers higher efficiency with low manufacturing cost. Therefore, this paper presents a comparative study between CdS and In 2 S 3 buffer layer based CIGS solar cell. The numerical study has been performed using a Solar Cell Capacitance Simulator named SCAPS-1D. The performance of CIGS solar cell is observed by adjusting the buffer layer thickness of both CdS and In 2 S 3 . The efficiency of CdS/CIGS solar cell is found 25.56% that is higher than the efficiency of In 2 S 3 /CIGS (24.41%) solar cell for 50 nm buffer layer thickness. It is also found that, the increase in buffer layer thickness from the optimum level degrades the performance of CdS/CIGS solar cell as compared to In 2 S 3 /CIGS solar cell. Therefore, In 2 S 3 based CIGS cell could be an ideal candidate as a substitute of toxic CdS buffer layer based CIGS solar cell.
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