Abstract
The thickness distribution and structure of ZnO films deposited by DC-magnetron sputtering of a zinc target in argon-oxygen gaseous medium at substrate temperature of 27°C and gas pressure in the chamber within 5×10−3 − 5×10−2 mm Hg was investigated. It was revealed that the use of a target with a certain depression in the sputtering zone allows depositing high quality c-oriented films at lower gas pressure than with a flat target. The dependence of film quality on geometric factors is interpreted on the basis of theoretical computations with the assumption that the film structure is improved when the flux of deposited Zn particles decreases while their energy increases.
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