Abstract
For the process of optimizing the process parameters in the process of cutting the hard and brittle materials such as single-crystal SiC by diamond wire saw, the process parameters such as wire saw speed, workpiece feed speed and workpiece rotation speed are the design variables, and the sawing force and surface roughness are the processing targets by orthogonal experimental design. The grey system theory is introduced to optimize the multi-objective cutting process. According to the experimental data, the grey correlation resolution coefficient is determined. The significant relationship between the processing parameters and the target characteristics is analyzed. The optimal combination of process parameters under multi-target conditions is obtained, namely the workpiece feed rate is 0.025mm/min, the wire saw speed is 1.6m/s, and the workpiece rotating speed is 16r/min.
Highlights
SiC, as the third generation of the main semiconductor material, has high Young's modulus, high hardness, high radiation resistance at high temperatures, good corrosion resistance, and a unique wide bandgap, high critical breakdown field strength and high thermal conductivity that make it widely used in aeronautics and astronautics, optoelectronics integration and microelectronics [1,2].The fixed abrasive diamond wire saw is widely used in the cutting and processing of hard and brittle materials because of its characteristics such as narrow slit, low material loss, low pollution, high cutting efficiency and suitable for processing large-diameter materials
It is very important to analyze the influence of process parameters on the sawing force and surface roughness in the cutting process, and to find the optimal process parameters that meet the processing requirements and improve the processing efficiency [3,4]
Many domestic and foreign scholars have conducted a lot of research work on the optimization of the process parameters of diamond wire saws for cutting hard and brittle materials
Summary
SiC, as the third generation of the main semiconductor material, has high Young's modulus, high hardness, high radiation resistance at high temperatures, good corrosion resistance, and a unique wide bandgap, high critical breakdown field strength and high thermal conductivity that make it widely used in aeronautics and astronautics, optoelectronics integration and microelectronics [1,2]. It is very important to analyze the influence of process parameters on the sawing force and surface roughness in the cutting process, and to find the optimal process parameters that meet the processing requirements and improve the processing efficiency [3,4]. Clark [3] used diamond wire saws to perform cutting experiment on ceramics, analyzed the effects of processing parameters on sawing force, force ratio, and surface roughness. Craig [4] performed single-crystal SiC cutting tests on a sway saw, and studied the effects of workpiece feed speed and sawing wire sway frequency on wafer surface quality. Gao [5] used self-made electroplated diamond wire saws to study the influence of process parameters and the cutting fluid on the surface and subsurface of singlecrystal Si cutting. The grey system theory is used to analyze the influence of the processing parameters on the sawing force and the surface quality, as well as to obtain the optimal parameter combination of improving the surface quality and improving the life of the wire saw
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