Optimization of lowermost layer material for low-resistivity Ag-based multilayer structure in low-emissivity glass

Abstract

To improve the thermal insulation performance of windows, lowering the electrical resistivity of the Ag-based multilayer structure in low-emissivity (low-E) glass is necessary. We have reported that the electrical resistivity of the structure can be reduced from 4.4 μΩ·cm to 3.4 μΩ·cm by inserting TiO2 in glass/TiO2/ZnO/Ag deposited by sputtering method. In this study, Nb2O5 and ZrO2 were selected as the lowermost layers and their effects on electrical resistivity were investigated. When the lowermost layer was Nb2O5, the resistivity became 3.4 μΩ·cm; however, the resistivity did not improve when the lowermost layer was ZrO2. Based on the X-ray diffraction, atomic force microscopy, and transmission electron microscopy results, we determined the factors correlated with electrical resistivity and elucidated the suitable conditions of the lowermost layer for reducing the electrical resistivity of the Ag-based multilayer structure in low-E glass.