OPTIMIZATION OF LEAKAGE PARAMETER ON FinFET BASED PRIORITY ENCODER

Abstract

The most promising substitute which are replacing bulk CMOS is DELTA (fully Depleted Lean channel Transistor) or FinFET (Fin-shaped field-effect transistor). For better performance and lower leakage parameters we can use FinFET either be shorted gates or independent gates. DELTA gates has good Short Channel Effects (SCE’s) compared to conventional based CMOS. In this paper, determination of energy efficient techniques for Priority Encoder using Multi-threshold Complementary Metal Oxide Semiconductor (MTCMOS) MTCMOS is an effectual circuit level technique that accommodate an excessive performance and low power design by requiring both low and high threshold voltage transistors. It is also called power/ground gating technique and is conventionally used for leakage power reduction. Simulation occurs at 45nm technology using CADENCE Software and measure leakage current of FinFET based Priority Encoder compare with MTCMOS technique. MTCMOS act as leakage reduction techniques. Using MTCMOS leakage power reduces 10-15% and Leakage Current reduces 10-15% in the simple FinFET based Priority Encoder. And average power consumption is also reduced to 15-20% in MTCMOS on FinFET based Priority Encoder. Keywords: Short Channel Effects, FinFET, Priority Encoder, MTCMOS.