Abstract
InAs quantum dots (QDs) were simultaneously formed on GaAs (1 0 0) and (3 1 1)A substrates at different temperatures, and the effect of substrate orientation was examined. The QD size was quite uniform on GaAs (1 0 0) (around 27 nm in diameter), whereas that on (3 1 1)A was found to be distributed between 25 and 65 nm. Atomic force microscope observation revealed that InAs islands on (3 1 1)A substrate look like many dots were connected together and formed arrowheads with the arrow orientation along the [ 2 ¯ 3 3 ] direction. In order to improve the uniformity in the dot size and shape on (3 1 1)A substrate, repeated growth sequence of a 0.25 ML InAs growth under continuous As flow is proposed.
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