Abstract
Development progress of high power 525 nm green LEDs employing GaInN/GaN active layers optimized for high morphological homogeneity is presented. We analyze the benefits of this process for the reproducibility in epitaxial growth and processing as well as across the wafer uniformity. We show that by means of our approach performance in terms of dominant wavelength and output power are highly reproducible across the wafer and from run to run. This lends special relevance also to any spectroscopic analysis of such sample material. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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