Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3– [formula omitted] grown by molecular beam epitaxy

Abstract

The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3– 1.55 μ m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 μ m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated.