Abstract
Depth resolution, roughness and atomic mixing parameters in sputter depth profiling with AES were studied on GaAs/AlAs multilayers in dependence of the type of sputtering gas (Ar, Xe, SF 6), the ion energy and the ion incidence angle, using the mixing–roughness–information depth (MRI) model for profile quantification and determination of the roughness and the mixing length. Both parameters were found to decrease with decreasing ion energy and increasing incidence angle. For some samples, the surface roughness was additionally measured by atomic force microscopy (AFM) after profiling. The lowest mixing length was obtained for 500 eV energy and 80° incidence angle and was 1.4, 0.8 and 0.4 nm for the ions of Ar, Xe and SF 6, respectively. The very low mixing length for SF 6 can be explained by the low impact energy of the atoms sharing the total energy of the ionized molecule.
Published Version
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