Abstract
Abstract Top surface imaging (TSI) process as a dry development process has been developed for many years to be contributed to device application. But, because conventional wet development process has already been developed so well, there was no room for TSI process to be utilized in devices. TSI process, even though having swelling problem, still has strong potential to be utilized in such layers which have severe topography and which contain small features exceeding the resolution limit of a stepper used. In this paper, swelling effect and its control by means of WEBS (WEt development Before Silylation) treatment for SS-201 resist is discussed. Also soft bake temperature is discussed in view of process optimization. How to form small contact holes beyond resolution limit is another topic for discussion. Finally, application result with TSI process will be shown.
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