Abstract
CdTe/CdS heterojunction solar cells have gained significant attention as commercial photovoltaic devices recently. In this study, numerical simulation is performed on CuO/CdTe/CdS/TiO2 multi-junction solar cell using CuO as a hole transporting layer (HTL) and TiO2 as a transparent conducting oxide (TCO) layer. The photovoltaic parameters of the proposed cell are optimized by employing solar cell capacitance simulator (SCAPS)-1D. A guideline for optimizing the highest efficiency (η = 23.59%), open circuit voltage (VOC = 0.949 V), short circuit current density (JSC = 28.48 mA/cm2) and fill factor (FF = 87.27%) is explored by modifying the thickness of HTL, TCO and the absorber layer. The efficiency has been optimized on account of the acceptor/donor density (1 × 1018 cm-3) of the HTL/TCO material. The power conversion efficiency of the cell is also optimized at the outcome of neutral, acceptor and donor defect concentration (1 × 1014 cm-3) of the absorber and an efficiency of 24.48% can be achieved at an operating temperature of 285 K. Pt is the most suitable back contact metal from others which can further increase the efficiency to 28.11%. This simulation approach will be useful for the synthesis and development of new CdTe/CdS thin film solar cells.
Published Version
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