Abstract
CuInS2 (CIS) solar cells with Zn(O,S) window layers deposited by co-sputtering were fabricated to optimize the conduction band offset (CBO) of Zn(O,S)/CIS. Zn(O,S) has an advantage in the control of the CBO because the conduction band minimum can be controlled by S/(S+O) compositional ratios. The efficiency of the CIS solar cells with the Zn(O,S) window layers increased with increasing S/(S+O) ratio from 0.19 to 0.50. However, the efficiency decreased at the S/(S+O) ratio of 0.59 owing to the decrease in the fill factor because of the double-diode-like behavior. The maximum efficiency was obtained at the S/(S+O) ratio of 0.50. Also, the CIS solar cell with standard bi-layer buffers of sputtered ZnO and chemical-bath-deposited CdS was fabricated and the performance was compared.
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